Why in news?
Odisha’s chief minister recently laid the foundation stone for the country’s first end‑to‑end silicon carbide (SiC) semiconductor fabrication plant. The facility, being set up by SiCSem Private Limited in partnership with a British firm, is part of India’s semiconductor mission and aims to position the nation as a leader in power electronics.
Background
Silicon carbide is a compound of silicon and carbon that occurs in nature as the rare mineral moissanite. When manufactured, SiC is extremely hard – ranking about 9–9.5 on the Mohs scale – and has a high melting point. Its crystals possess a wide bandgap, high thermal conductivity and strong electric field breakdown strength. These properties allow SiC devices to operate at higher temperatures, voltages and frequencies than conventional silicon chips. Because it also has a low thermal expansion coefficient and resists chemical attack, SiC is used as an abrasive, in ceramic armour, and increasingly in high‑power semiconductor devices for electric vehicles, renewable energy systems, railways and aerospace.
Details of the project
- Investment and capacity: The plant will cost about ₹2,067 crore. It is designed to produce 60,000 SiC wafers and 96 million packaged devices annually, making it an “end‑to‑end” facility covering wafer fabrication to final packaging.
- Job creation: Around 5,000 direct and indirect jobs are expected to be generated during construction and operation. The project aligns with the government’s aim of creating a skilled workforce in the semiconductor sector.
- Applications: SiC devices made here will be used in missiles, electric vehicles, rail traction systems, fast chargers, data centre power supplies, consumer electronics and solar inverters. Their ability to handle high power with minimal energy loss makes them ideal for modern green technologies.
- Policy context: The plant is part of the India Semiconductor Mission, which provides financial incentives to attract chip manufacturers. It also aligns with the “Make in India” initiative and efforts to reduce dependence on imported power devices.
Significance
- Technological independence: Producing SiC semiconductors domestically will reduce imports and secure supply chains for critical industries.
- Boost to high‑tech manufacturing: The project positions India to compete in the global market for power electronics, supporting electric mobility and renewable energy goals.
- Economic impact: Beyond job creation, the facility can attract ancillary industries and stimulate research and development in advanced materials and device engineering.
Conclusion
The launch of India’s first silicon carbide fabrication plant marks a milestone for the nation’s semiconductor ambitions. By leveraging SiC’s superior properties, the facility promises to supply critical components for energy‑efficient technologies and spur innovation across multiple sectors.
Sources: The Indian Express, Wikipedia